PECULIARITIES OF CRYSTALLIZATION PROCESS FOR Ge2Sb2Te5 THIN FILMS BY NANOSECOND SINGLE LASER PULSE

被引：0

作者：

Lazarenko, P. ^{[1
]}

Savelyev, M. ^{[1
]}

Sherchenkov, A. ^{[1
]}

Gerasimenko, A. ^{[1
]}

Kozyukhin, S. ^{[2
,3
]}

Glukhenkaya, V. ^{[1
]}

Polokhin, A. ^{[1
]}

Shaman, Y. ^{[1
]}

Vinogradov, A. ^{[1
]}

机构：

[1] Natl Res Univ Elect Technol, Zelenograd 124498, Russia

[2] RAS, Kurnakov Inst Gen & Inorgan Chem, Moscow 119991, Russia

[3] Natl Res Tomsk State Univ, Tomsk 634050, Russia

来源：

CHALCOGENIDE LETTERS | 2018年 / 15卷 / 01期

关键词：

Ge2Sb2Te5; Phase change material; Thin film; Laser irradiation; Crystallization; RAMAN-SCATTERING; GETE;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Influence of nanosecond single laser irradiation on the surface morphology and structural transformation of the amorphous Ge2Sb2Te5 thin films was investigated. The destructions of the Ge2Sb2Te5 thin film after single ns pulse laser irradiation with fluence > 99.1 mJ/cm(2) were observed. The laser irradiation with fluence in the range from 74 to 77 mJ/cm(2) leads to crystallization of amorphous phase. Structure of as-deposited, annealed at 180 degrees C and irradiated thin films were examined by Raman spectroscopy. The intensity and shape of Raman spectra for irradiated (77 mJ/cm(2)) and annealed Ge2Sb2Te5 thin films are close to each other and correspond to fcc. However, the difference between the Raman spectra of thin film after nanosecond single laser irradiation and literature data for continuous-wave laser were observed.

引用

页码：25 / 33

页数：9

共 24 条

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