>750 mV open circuit voltage measured on 50 μm thick silicon heterojunction solar cell

被引：97

作者：

Herasimenka, Stanislau Y. ^{[1
]}

Dauksher, William J. ^{[1
]}

Bowden, Stuart G. ^{[1
]}

机构：

[1] Arizona State Univ, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 05期

基金：

美国国家科学基金会;

关键词：

EFFICIENCY; RECOMBINATION;

D O I：

10.1063/1.4817723

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents experimental evidence that silicon solar cells can achieve >750 mV open circuit voltage at 1 Sun illumination providing very good surface passivation is present. 753 mV local open circuit voltage was measured on a 50 mu m thick non-metalized silicon heterojunction solar cell. The paper also considers a recombination model at open circuit based on the recent Auger and radiative recombination parameterization and the measured surface saturation current density. The loss mechanisms at open circuit and several practical pathways to achieve >760 mV open circuit voltage in silicon heterojunction solar cells are discussed. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 25 条

[1] Injection dependence of spontaneous radiative recombination in crystalline silicon: Experimental verification and theoretical analysis [J].