Bulk photovoltaic effect at infrared wavelength in strained Bi2Te3 films

被引：17

作者：

Liu, Yucong ^{[1
,2
]}

Chen, Jiadong ^{[3
]}

Wang, Chao ^{[1
]}

Deng, Huiyong ^{[1
]}

Zhu, Da-Ming ^{[4
]}

Hu, Gujin ^{[1
]}

Chen, Xiaoshuang ^{[1
]}

Dai, Ning ^{[1
,5
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Changzhou Inst Optoelect Technol, Changzhou 213164, Peoples R China

[4] Univ Missouri, Dept Phys, Kansas City, MO 64110 USA

[5] Jiangsu Collaborat Innovat Ctr Photovolat Sci & E, Changzhou 213164, Peoples R China

来源：

APL MATERIALS | 2016年 / 4卷 / 12期

基金：

上海市自然科学基金; 中国国家自然科学基金;

关键词：

TOPOLOGICAL INSULATORS; PIEZOELECTRICITY;

D O I：

10.1063/1.4971798

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

As a prominent three-dimensional (3-D) topological insulator, traditional thermoelectric material Bi2Te3 has re-attracted greater interest in recent years. Herein, we demonstrate for the first time that c-axis oriented strained Bi2Te3 films exhibit the bulk photovoltaic effect (BPVE) at infrared wavelengths, which was only found in wide band-gap ferroelectric materials before. Moreover, further experiments show that the bulk photovoltaic effect probably comes from the flexoelectric effect which was induced by the stress gradient in strained Bi2Te3 films. And we anticipate that the results are generalizable to other layer-structured or two-dimensional (2-D) materials, e.g., Bi2Se3 and MoS2. (C) 2016 Author(s).

引用

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