Increased charge carrier mobility and molecular packing of a solution sheared diketopyrrolopyrrole-based donor-acceptor copolymer by alkyl side chain modification

被引:22
作者
Hambsch, Mike [1 ,2 ]
Erdmann, Tim [1 ,3 ,6 ]
Chew, Annabel R. [4 ]
Bernstorff, Sigrid [5 ]
Salleo, Alberto [4 ]
Kiriy, Anton [1 ,3 ]
Voit, Brigitte [1 ,3 ]
Mannsfeld, Stefan C. B. [1 ,2 ]
机构
[1] Tech Univ Dresden, Ctr Adv Elect Dresden, D-01062 Dresden, Germany
[2] Tech Univ Dresden, Fac Elect & Comp Engn, D-01062 Dresden, Germany
[3] Leibniz Inst Polymerforsch Dresden eV, D-01069 Dresden, Germany
[4] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[5] Elettra Sincrotrone Trieste, I-34149 Basovizza, Italy
[6] IBM Almaden Res Ctr, 650 Harry Rd, San Jose, CA 95120 USA
基金
美国国家科学基金会;
关键词
HIGH-PERFORMANCE AMBIPOLAR; SELF-ASSEMBLED MONOLAYERS; FIELD-EFFECT TRANSISTORS; CONJUGATED POLYMERS; ORGANIC SEMICONDUCTORS; TRANSPORT; ELECTRON; CRYSTALLINITY; MORPHOLOGY; DENSITY;
D O I
10.1039/c8tc06255b
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Semiconducting polymers based on diketopyrrolopyrrole have achieved high charge carrier mobilities in field-effect transistors due to their strong intermolecular interactions, which lead to a high structural order that is beneficial for charge transport. One factor that influences the degree of order in thin films is the choice of solubilizing side chains. In this study, we present a new polymer, poly{3-([2,2:5,2-terthiophen]-5-yl)-2,5-bis(6-dodecyloctadecyl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione-6,5-diyl}, which has extended side chains and side-chain branching points that were moved further away from the polymer backbone. Bottom-gate, top-contact field-effect transistors from solution sheared films of this material show average saturation hole mobilities of close to 1 cm(2) V-1 s(-1) which is higher than in devices of a commonly used version of this polymer with shorter side chains. The increase in mobility is attributed to an improved structural order in the thin-film state and a decrease in - stacking distance. The fabricated devices show very good air-stability without significant degradation in performance after more than one year storage under ambient conditions.
引用
收藏
页码:3665 / 3674
页数:10
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