A 183 GHz Metamorphic HEMT Low-Noise Amplifier With 3.5 dB Noise Figure

被引：28

作者：

Moschetti, Giuseppe ^{[1
]}

Leuther, Arnulf ^{[1
]}

Massler, Herman ^{[1
]}

Aja, Beatriz ^{[1
]}

Roesch, Markus ^{[1
]}

Schlechtweg, Michael ^{[1
]}

Ambacher, Oliver ^{[1
]}

Kangas, Ville ^{[2
]}

Genevieve-Perichaud, Marie ^{[2
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, D-79108 Freiburg, Germany

[2] European Space Agcy ESTEC, NL-2200 AG Noordwijk, Netherlands

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2015年 / 25卷 / 09期

关键词：

G-band; low-noise amplifiers (LNAs); metamorphic high electron mobility transistor (mHEMT); monolithic microwave integrated circuit (MMIC);

D O I：

10.1109/LMWC.2015.2451355

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a 183 wGHz low-noise amplifier (LNA), designed primarily for water vapor detection in atmosphere. The LNA requirements were defined by MetOp Second Generation (MetOp-SG) Microwave Sounder, Microwave Imager and Ice Cloud Imager instruments. MetOp-SG is the European contribution to operational meteorological observations from polar orbit. This LNA advances the current state-of-the-art for the InGaAs metamorphic high electron mobility transistor (mHEMT) technology. The five-stage common-source MMIC amplifier utilizes transistors with a gate length of 50 nm. On-wafer measurements show a noise figure of 3.5 dB at the operative frequency, about 1 dB lower than previously reported mHEMT LNAs, and a gain of 24 +/- 2 dB over the bandwidth 160-200 GHz. The input and output matching are -11 dB and -10 dB , respectively. Moreover, the dc power dissipation at the optimal bias for noise is as low as 24 mW.

引用

页码：618 / 620

页数：3

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