Effect of Skin Impedance on Delay and Crosstalk in Lossy and Non-uniform On-Chip Interconnects

被引:0
作者
Ramesh, Yenikepalli [1 ]
Kumar, Vobulapuram Ramesh [2 ]
机构
[1] Koneru Lakshmaiah Univ, Dept Elect & Commun Engn, Guntur, Andhra Pradesh, India
[2] Rajeev Gandhi Mem Coll Engn & Technol, Dept Elect & Commun Engn, Nandyal, India
来源
INTELLIGENT COMMUNICATION, CONTROL AND DEVICES, ICICCD 2017 | 2018年 / 624卷
关键词
Skin effect; FDTD; VLSI interconnects; CMOS; TRANSIENT ANALYSIS; FDTD MODEL;
D O I
10.1007/978-981-10-5903-2_58
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
An efficient finite-difference time-domain (FDTD) model is presented to analyse time delay and the crosstalk noise in lossy non-uniform interconnects. The complementary metal oxide semiconductor (CMOS) is used as driver for non-uniform interconnects and terminated with capacitive loads. Further, the resistive losses at high frequency due to skin effect and shrinking of interconnects are inculcated in the proposed model and analysed the high frequency effects. The improved alpha power law model represents the nonlinear behaviour of CMOS drivers, and the non-uniform interconnect is modelled including skin effect by FDTD technique. Hence, the proposed algorithm accurately estimates the crosstalk noise and delay in non-uniform interconnects at high frequencies and the results of FDTD are validated using HSPICE simulations.
引用
收藏
页码:569 / 576
页数:8
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