The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1-xInxNyAs1-y/GaAs quantum well

被引：7

作者：

Yesilgul, Unal ^{[1
]}

Ungan, Fatih ^{[1
]}

Sakiroglu, Serpil ^{[2
]}

Duque, Carlos ^{[3
]}

Mora-Ramos, Miguel ^{[3
,4
]}

Kasapoglu, Esin ^{[1
]}

Sari, Huseyin ^{[1
]}

Sokmen, Ismail ^{[2
]}

机构：

[1] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey

[2] Dokuz Eylul Univ, Dept Phys, TR-35140 Izmir, Turkey

[3] Univ Antioquia, Inst Fis, Medellin 1226, Colombia

[4] Morelos State Univ, Fac Sci, Cuernavaca 62209, Morelos, Mexico

来源：

NANOSCALE RESEARCH LETTERS | 2012年 / 7卷

关键词：

Impurities; Quantum well; Dilute nitride; MOLECULAR-BEAM EPITAXY; HYDROSTATIC-PRESSURE; OPTICAL-PROPERTIES; BAND PARAMETERS; GAINNAS ALLOYS; ELECTRIC-FIELD; STATES; PHOTOIONIZATION; SINGLE; DOT;

D O I：

10.1186/1556-276X-7-586

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1-x In (x) N (y) As1-y /GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.

引用

页数：5

共 36 条

[1] Bowing parameter of the band-gap energy of GaNxAs1-x [J].