Modification of electronic properties of graphene under three patterns of elastic deformation

被引:5
|
作者
Majid, M. J. [1 ]
Najlaa, B. K. [1 ]
Savinskii, S. S. [2 ]
机构
[1] Univ Basrah, Dept Phys, Coll Educ Pure Sci, Basrah, Iraq
[2] Udmurt State Univ, Izhevsk 426034, Russia
关键词
Graphene; Tight-binding approximation; Band structure; Electronic density of states; Energy gap; Elastic deformation;
D O I
10.1007/s12648-017-1089-9
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In the present work, the electronic properties of graphene under the effect of three patterns of deformation are investigated by using tight-binding approximation. The band structure and the density of state (DOS) are calculated in wide range of energies around Fermi level. Moreover, we have studied an innovative method of deformation that so-called a sub-lattice strain. It is evident that most of these patterns of deformation can be used to modify the electronic properties of graphene. By contrast, it is also shown that the electronic properties are not affected under the influence of sub-lattice deformation along z-direction, where the energy spectrum and the DOS are changed imperceptibly.
引用
收藏
页码:159 / 169
页数:11
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