Studies on RF Magnetron Sputtered HfO2 Thin Films for Microelectronic Applications

被引：27
作者：
Kondaiah, P. [1 ]
Shaik, Habibuddin [1 ,2 ,3 ]
Rao, G. Mohan [1 ]
机构：
[1] Indian Inst Sci, Dept Instrumentat & Appl Phys, Bangalore 560012, Karnataka, India
[2] Nitte Meenakshi Inst Technol, Ctr Nanomat & MEMS, Bangalore 560064, Karnataka, India
[3] Nitte Meenakshi Inst Technol, Dept Phys, Bangalore 560064, Karnataka, India
来源：
ELECTRONIC MATERIALS LETTERS | 2015年 / 11卷 / 04期
关键词：
reactive RF magnetron sputtering; optical properties; flat band voltage; OPTICAL-PROPERTIES; THERMAL-STABILITY; TIO2; FILMS; HAFNIUM; DIELECTRICS;
D O I：
10.1007/s13391-015-4490-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the effect of oxygen flow rate during the reactive magnetron sputtering on the compositional, structural, optical and electrical properties of HfO2 films. We also studied the influence of annealing temperature on the structural and electrical properties of optimized HfO2 films of 25 to 30 nm thick. X-ray photoelectron study reveals that the films deposited at 15 SCCM of oxygen flow rate are stoichiometric and have an optical band gap of 5.86 eV. X-ray diffraction indicates that films without oxygen flow are amorphous, and beyond an oxygen flow rate of 5 SCCM exhibit polycrystalline monoclinic structure. At an annealing temperature of 600 degrees C, tetragonal phase was observed besides the monoclinic phase. The dielectric constant of 11 and low leakage currents of 1 x 10(-7) A/cm(2) were achieved for the stoichiometric films. As-deposited films show significant frequency dispersion due to the presence of defect states at the HfO2/Si interface, and it reduces after annealing.
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收藏
页码：592 / 600
页数：9
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