Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices

被引：249

作者：

Kozodoy, P ^{[1
]}

Hansen, M

DenBaars, SP

Mishra, UK

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 24期

关键词：

D O I：

10.1063/1.123220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High p-type conductivity of Mg-doped AlGaN/GaN superlattices is demonstrated. The measured hole concentration at room temperature is over 2.5x10(18) cm(-3), more than ten times that obtained in bulk AlGaN layers, and lateral resistivity as low as 0.2 Omega cm is realized. The temperature dependence of the resistivity is drastically reduced compared to bulk films, providing evidence of the formation of a confined hole gas. Valence band bending due primarily to piezoelectric and spontaneous polarization is identified as the origin of these effects. (c) 1999 American Institute of Physics. [S0003-6951(99)01824-0].

引用

页码：3681 / 3683

页数：3

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