Magnetic Tunnel Junctions with Perpendicular Anisotropy Using a Co2FeAl Full-Heusler Alloy

被引：57
|
作者：
Wen, Zhenchao [1 ]
Sukegawa, Hiroaki [1 ]
Kasai, Shinya [1 ]
Hayashi, Masamitsu [1 ]
Mitani, Seiji [1 ]
Inomata, Koichiro [1 ]
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
来源：
APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 06期
关键词：
ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I：
10.1143/APEX.5.063003
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We fabricated perpendicularly magnetized magnetic tunnel junctions (p-MTJs) with an ultrathin Co2FeAl (CFA) full-Heusler alloy electrode having large interface magnetic anisotropy of CFA/MgO. An out-of-plane tunnel magnetoresistance (TMR) ratio of 53% at room temperature was observed in CFA/MgO/Co20Fe60B20 p-MTJs. By inserting a 0.1-nm-thick Fe (Co50Fe50) layer between the MgO and Co20Fe60B20 layers, The TMR ratio was significantly enhanced to 91% (82%) due to the improved interface. The bias voltage dependence of differential conductance did not clearly show coherent tunneling characteristics for ultrathin CFA-MTJs, suggesting that a higher TMR ratio may be achieved by improving the B2 ordering of CFA and/or interface structure. (C) 2012 The Japan Society of Applied Physics
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页数：3
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