Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag2Se Nanoparticles for Flexible Nonvolatile Memory Applications

被引：116

作者：

Jang, Jaewon ^{[1
]}

Pan, Feng ^{[1
]}

Braam, Kyle ^{[1
]}

Subramanian, Vivek ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Sunchon Natl Univ, World Class Univ Program, Sunchon 540742, Jeonnam, South Korea

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 26期

关键词：

Ag2Se nanoparticles; solution process; flexible electronics; resistance switching; non-volatile memory; SILVER SELENIDE; THIN-FILMS; SUPERIONIC CONDUCTOR; RESISTIVE MEMORY; PHASE; NANOCRYSTALS; DEVICES;

D O I：

10.1002/adma.201200671

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Solution-processed mechanically flexible resistive random access memories are fabricated using Ag2Se nanoparticles; the fabricated Ag/Ag 2Se/Au memory devices on flexible poly-ethylene-naphthalate substrates show bipolar switching memory characteristics, with low voltage (<1.5 V) operation, no significant retention loss after 105 s, and no degradation in endurance after 104 switching cycles, with stable operation even under a mechanical strain of 0.38%. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3573 / 3576

页数：4

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