共 8 条
- [1] Bameril H, 2020, IEEE RAD FREQ INTEGR, P191, DOI [10.1109/rfic49505.2020.9218441, 10.1109/RFIC49505.2020.9218441]
- [2] Buckwalter JF, 2016, 2016 IEEE 16TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), P116, DOI 10.1109/SIRF.2016.7445485
- [3] A 13.5-dBm 200-255-GHz 4-Way Power Amplifier and Frequency Source in 130-nm BiCMOS [J]. IEEE SOLID-STATE CIRCUITS LETTERS, 2019, 2 (11): : 268 - 271
- [4] Muralidharan Sriram, 2015, 2015 Asia-Pacific Microwave Conference (APMC). Proceedings, P1, DOI 10.1109/APMC.2015.7413041
- [5] Muralidharan S, 2016, IEEE RAD FREQ INTEGR, P302, DOI 10.1109/RFIC.2016.7508311
- [6] Sarmah N, 2016, PROC EUR SOLID-STATE, P193, DOI 10.1109/ESSCIRC.2016.7598275
- [7] Van Thienen N, 2014, IEEE I C ELECT CIRC, P144, DOI 10.1109/ICECS.2014.7049942