The role of carbon in ion beam nano-patterning of silicon

被引：18
|
作者：
Bhattacharjee, S. [1 ,2 ]
Karmakar, P. [1 ]
Naik, V. [1 ]
Sinha, A. K. [2 ]
Chakrabarti, A. [1 ]
机构：
[1] Ctr Variable Energy Cyclotron, Kolkata 700064, India
[2] UGC DAE Consortium Sci Res, Kolkata 700098, India
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 18期
关键词：
THIN; SI;
D O I：
10.1063/1.4826512
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a comparative study of nano- pattern formations on a carbon film and a smooth Si(100) surface following inert and chemically active ion bombardment. For the case of carbon film, patterns could be formed both by inert (Ar+) and self (C+) ion bombardment with the former producing ripples at relatively lower fluence. In contrast, bombardment by inert Ar+ failed to form the nano patterns on Si surface, while bombardment by the same energy C+ generated the ripples. Thus, impurity induced chemical effect seems to be crucial rather than the Bradley-Harper or Carter-Vishnyakov effects for destabilizing the surface for ripple formation. (c) 2013 AIP Publishing LLC.
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页数：4
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