The role of carbon in ion beam nano-patterning of silicon

被引：18

作者：

Bhattacharjee, S. ^{[1
,2
]}

Karmakar, P. ^{[1
]}

Naik, V. ^{[1
]}

Sinha, A. K. ^{[2
]}

Chakrabarti, A. ^{[1
]}

机构：

[1] Ctr Variable Energy Cyclotron, Kolkata 700064, India

[2] UGC DAE Consortium Sci Res, Kolkata 700098, India

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 18期

关键词：

THIN; SI;

D O I：

10.1063/1.4826512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a comparative study of nano- pattern formations on a carbon film and a smooth Si(100) surface following inert and chemically active ion bombardment. For the case of carbon film, patterns could be formed both by inert (Ar+) and self (C+) ion bombardment with the former producing ripples at relatively lower fluence. In contrast, bombardment by inert Ar+ failed to form the nano patterns on Si surface, while bombardment by the same energy C+ generated the ripples. Thus, impurity induced chemical effect seems to be crucial rather than the Bradley-Harper or Carter-Vishnyakov effects for destabilizing the surface for ripple formation. (c) 2013 AIP Publishing LLC.

引用

页数：4

共 22 条

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