Room temperature single electron transitor by AFM nano-oxidation process - Coincidence in experimental and theoretical results

被引：0
|
作者：
Matsumoto, K [1 ]
Gotoh, Y [1 ]
Maeda, T [1 ]
Harris, JS [1 ]
机构：
[1] MITI, Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
来源：
STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXI) | 1999年 / 99卷 / 17期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The experimental results of the room temperature operated single electron transistor(SET) were simulated using orthodox theory and 3 dimensional Poisson's equation. The simulated results coincided well with the experimental results.
引用
收藏
页码：215 / 217
页数：3
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