Room temperature single electron transitor by AFM nano-oxidation process - Coincidence in experimental and theoretical results

被引：0

作者：

Matsumoto, K ^{[1
]}

Gotoh, Y ^{[1
]}

Maeda, T ^{[1
]}

Harris, JS ^{[1
]}

机构：

[1] MITI, Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXI) | 1999年 / 99卷 / 17期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The experimental results of the room temperature operated single electron transistor(SET) were simulated using orthodox theory and 3 dimensional Poisson's equation. The simulated results coincided well with the experimental results.

引用

页码：215 / 217

页数：3

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