Mechanism of fluorine reduction in C4F8/Ar parallel-plate-type electron-cyclotron-resonance plasma by a Si top plate

被引：8

作者：

Hayashi, H ^{[1
]}

Okigawa, M ^{[1
]}

Morishita, S ^{[1
]}

Sekine, M ^{[1
]}

机构：

[1] Assoc Super Adv Elect Technol, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1999年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.581990

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The density of F in C4F8/Ar plasma could be reduced by 34% when the Si top plate was bombarded by energetic ions in a parallel-plate-type 500 MHz electron-cyclotron-resonance plasma reactor, but that in CF4/Ar plasma was not reduced. We measured the densities of CFx (x = 1 - 3), Si, and F in both plasmas as a function of ion-bombardment energy and found that F was generated from CF2 in C4F8/Ar plasma but not in CF4/Ar plasma, and that the CF2 density decreased ts a similar extent with increasing ion-bombardment energy in both plasmas. We conclude that the reduction of the F density in C4F8/Ar plasma was caused by the decrease in CF2 density and not by a direct reaction of F with Si when the Si plate was irradiated by energetic ions. (C) 1999 American Vacuum Society. [S0734-2101(99)01005-2].

引用

页码：2517 / 2524

页数：8