Dielectric enhancement in interface-modified BaTiO3/SrTiO3 multilayered films prepared by pulsed laser deposition

被引：6
作者：
Hu, DZ
Shen, MR [1 ]
Cao, WW
机构：
[1] Suzhou Univ, Dept Phys, Suzhou 215006, Peoples R China
[2] Penn State Univ, Dept Math, University Pk, PA 16802 USA
[3] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
来源：
MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 03期
基金：
中国国家自然科学基金;
关键词：
dielectrics; thin films; multilayer structure;
D O I：
10.1016/j.mee.2005.12.007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Pulsed-laser-deposited polycrystalline BaTiO3/SrTiO3 multilayered films oil Pt/Ti/SiO2/Si substrates have been fabricated with interfacial modification through lowering the oxygen pressure during the time interval in between two adjacent depositions. It is found that the formation of the heterolayered structure is essential to get the dielectric enhancement. Such heterolayered films have large dielectric constant of 1201 with a loss tangent below 0.1 at 10 KHz. This is about two times that of the identically prepared Ba0.5Sr0.5TiO3/ Ba0.5Sr0.5TiO3 homolayered and uniform Ba0.5Sr0.5TiO3 films. The enhancement of dielectric properties is attributed to the presence of the interfacial regions with controllable space charges due to the formation of oxygen vacancies at lower oxygen pressure. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：553 / 556
页数：4
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