Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

被引：108

作者：

Tanaka, Kenichiro ^{[1
]}

Morita, Tatsuo ^{[1
]}

Umeda, Hidekazu ^{[1
]}

Kaneko, Saichiro ^{[1
]}

Kuroda, Masayuki ^{[1
]}

Ikoshi, Ayanori ^{[1
]}

Yamagiwa, Hiroto ^{[1
]}

Okita, Hideyuki ^{[1
]}

Hikita, Masahiro ^{[1
]}

Yanagihara, Manabu ^{[1
]}

Uemoto, Yasuhiro ^{[1
]}

Takahashi, Satoru ^{[1
]}

Ueno, Hiroaki ^{[1
]}

Ishida, Hidetoshi ^{[1
]}

Ishida, Masahiro ^{[1
]}

Ueda, Tetsuzo ^{[1
]}

机构：

[1] Panasonic Corp, Automot & Ind Syst Co, Div Engn, Kyoto 6178520, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 16期

关键词：

ELECTRON-MOBILITY TRANSISTORS; FIELD-EFFECT TRANSISTORS; ALGAN/GAN HEMTS; SEMICONDUCTOR; DEGRADATION; VOLTAGE; SIMULATION;

D O I：

10.1063/1.4934184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current collapse is suppressed up to 800 V of drain voltage in our proposed device, Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT), where an additional p-GaN layer is grown on the AlGaN barrier layer and is connected to the drain electrode. We present, based on a device simulation and electroluminescence study, that the hole injection from the additional drain-side p-GaN at the OFF state compensates the hole emission in the epilayer. As a result, the gate-drain access region is not negatively charged at the OFF state, resulting in the drastic suppression of current collapse in HD-GIT. (C) 2015 AIP Publishing LLC.

引用

页数：4

共 28 条

[1] Carrier trapping and current collapse mechanism in GaN metal-semiconductor field-effect transistors [J].

Anwar, AFM ;

Islam, SS ;

Webster, RT .

APPLIED PHYSICS LETTERS, 2004, 84 (11) :1970-1972

[2] Trapping effects and microwave power performance in AlGaN/GaN HEMTs [J].

Binari, SC ;

Ikossi, K ;

Roussos, JA ;

Kruppa, W ;

Park, D ;

Dietrich, HB ;

Koleske, DD ;

Wickenden, AE ;

Henry, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :465-471

[3] Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz [J].

Coffie, R ;

Shen, L ;

Parish, G ;

Chini, A ;

Buttari, D ;

Heikman, S ;

Keller, S ;

Mishra, UK .

ELECTRONICS LETTERS, 2003, 39 (19) :1419-1420

[4] UNIFIED DISORDER INDUCED GAP STATE MODEL FOR INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES [J].

HASEGAWA, H ;

OHNO, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1130-1138

[5] Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures [J].

Hashizume, T ;

Ootomo, S ;

Oyama, S ;

Konishi, M ;

Hasegawa, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04) :1675-1681

[6] Physics-based simulation of buffer-trapping effects on slow current transients and current collapse in GaN field effect transistors [J].

Horio, K ;

Yonemoto, K ;

Takayanagi, H ;

Nakano, H .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (12)

[7] Two-dimensional transient simulations of drain lag and current collapse in GaN-based high-electron-mobility transistors [J].

Hu, W. D. ;

Chen, X. S. ;

Yin, F. ;

Zhang, J. B. ;

Lu, W. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (08)

[8] Critical voltage for electrical degradation of GaN high-electron mobility transistors [J].

Joh, Jungwoo ;

del Alamo, Jesus A. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (04) :287-289

[9]

Kaneko S, 2015, INT S POW SEM DEV IC

[10] Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors [J].

Khan, MA ;

Chen, Q ;

Yang, JW ;

Shur, MS ;

Dermott, BT ;

Higgins, JA .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (07) :325-327

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