Electronic structures and thermoelectric properties of layered BiCuOCh oxychalcogenides (Ch = S, Se and Te): first-principles calculations

被引:134
作者
Zou, Daifeng [1 ]
Xie, Shuhong [1 ]
Liu, Yunya [1 ]
Lin, Jianguo [1 ]
Li, Jiangyu [2 ]
机构
[1] Xiangtan Univ, Fac Mat Optoelect & Phys, Minist Educ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Hunan, Peoples R China
[2] Univ Washington, Dept Mech Engn, Seattle, WA 98195 USA
基金
美国国家科学基金会;
关键词
TOTAL-ENERGY CALCULATIONS; ALPHA-PBO; BICUSEO; M=BI; GD;
D O I
10.1039/c3ta11222e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The p-type BiCuOCh (Ch = S, Se and Te) compounds exhibit very low lattice thermal conductivities and moderate power factors in the medium temperature range, resulting in high thermoelectric figures of merit. In this paper, we investigated their electronic structures using density functional theory, and discovered that a mixture of heavy and light bands near the valence band maximum is beneficial for good thermoelectric performance, and the Cu 3d-Ch np antibonding state near the valence band edge determines the transport properties of BiCuOCh. Semi-classic Boltzmann transport theory was then used to calculate the Seebeck coefficients, electrical conductivities and power factors of BiCuOCh, and the optimal doping concentrations were estimated based on the predicted maximum power factors. The temperature dependence of the thermoelectric transport properties of BiCuOSe were also estimated and compared with experimental data, with good agreement observed.
引用
收藏
页码:8888 / 8896
页数:9
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