A Compact Model for Organic Field-Effect Transistors With Improved Output Asymptotic Behaviors

被引：78

作者：

Kim, Chang Hyun ^{[1
]}

Castro-Carranza, Alejandra ^{[2
]}

Estrada, Magali ^{[3
]}

Cerdeira, Antonio ^{[3
]}

Bonnassieux, Yvan ^{[1
]}

Horowitz, Gilles ^{[1
]}

Iniguez, Benjamin ^{[2
]}

机构：

[1] Ecole Polytech, CNRS, Lab Phys Interfaces & Couches Minces, UMR 7647, F-91128 Palaiseau, France

[2] Univ Rovira & Virgili, DEEEA, Tarragona 43007, Spain

[3] CINVESTAV, Dept Ingn Elect, SEES, Mexico City 07360, DF, Mexico

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 03期

关键词：

Asymptotic behaviors; circuit simulation; compact modeling; organic field-effect transistors (OFETs); THIN-FILM TRANSISTORS; PARAMETER EXTRACTION; MOBILITY; DEVICE; DESIGN; TFTS;

D O I：

10.1109/TED.2013.2238676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Here, we propose an advanced compact analytical current-voltage model for organic field-effect transistors (OFETs), which can be incorporated into SPICE-type circuit simulators. We improved the output saturation behavior by introducing a new asymptotic function that also enables more precise low-voltage current and conductance fitting. A new expression for the subthreshold current was suggested to cover all operation regimes of OFETs. All model parameters were extracted by a systematic method, and the comparison of the modeled current with the experimental data on pentacene-based OFETs confirmed the validity of the model over a wide operation range.

引用

页码：1136 / 1141

页数：6

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