A Compact Model for Organic Field-Effect Transistors With Improved Output Asymptotic Behaviors

被引:76
|
作者
Kim, Chang Hyun [1 ]
Castro-Carranza, Alejandra [2 ]
Estrada, Magali [3 ]
Cerdeira, Antonio [3 ]
Bonnassieux, Yvan [1 ]
Horowitz, Gilles [1 ]
Iniguez, Benjamin [2 ]
机构
[1] Ecole Polytech, CNRS, Lab Phys Interfaces & Couches Minces, UMR 7647, F-91128 Palaiseau, France
[2] Univ Rovira & Virgili, DEEEA, Tarragona 43007, Spain
[3] CINVESTAV, Dept Ingn Elect, SEES, Mexico City 07360, DF, Mexico
关键词
Asymptotic behaviors; circuit simulation; compact modeling; organic field-effect transistors (OFETs); THIN-FILM TRANSISTORS; PARAMETER EXTRACTION; MOBILITY; DEVICE; DESIGN; TFTS;
D O I
10.1109/TED.2013.2238676
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Here, we propose an advanced compact analytical current-voltage model for organic field-effect transistors (OFETs), which can be incorporated into SPICE-type circuit simulators. We improved the output saturation behavior by introducing a new asymptotic function that also enables more precise low-voltage current and conductance fitting. A new expression for the subthreshold current was suggested to cover all operation regimes of OFETs. All model parameters were extracted by a systematic method, and the comparison of the modeled current with the experimental data on pentacene-based OFETs confirmed the validity of the model over a wide operation range.
引用
收藏
页码:1136 / 1141
页数:6
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