The pore of voltage-gated potassium ion channels is strained when closed

被引:46
作者
Fowler, Philip W. [1 ]
Sansom, Mark S. P. [1 ]
机构
[1] Univ Oxford, Dept Biochem, Oxford OX1 3QU, England
基金
英国工程与自然科学研究理事会; 英国生物技术与生命科学研究理事会; 英国惠康基金;
关键词
SHAKER K+ CHANNELS; MOLECULAR-DYNAMICS SIMULATIONS; GATING CHARGE; TRANSMEMBRANE HELICES; ACTIVATION GATE; CRYSTAL-STRUCTURE; S4-S5; LINKER; KV CHANNEL; SENSOR; DOMAIN;
D O I
10.1038/ncomms2858
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Voltage-gated potassium channels form potassium-selective pores in cell membranes. They open or close in response to changes in the transmembrane potential and are essential for generating action potentials, and thus for the functioning of heart and brain. While a mechanism for how these channels close has been proposed, it is not clear what drives their opening. Here we use free energy molecular dynamics simulations to show that work must be done on the pore to reduce the kink in the pore-lining (S6) alpha-helices, thereby forming the helix bundle crossing and closing the channel. Strain is built up as the pore closes, which subsequently drives opening. We also determine the effect of mutating the PVPV motif that causes the kink in the S6 helix. Finally, an approximate upper limit on how far the S4 helix is displaced as the pore closes is estimated.
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页数:8
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