Structural and ferromagnetic properties of InMnAs thin films including MnAs nanoclusters grown on InP substrates

被引：2

作者：

Yoshizawa, H. ^{[1
]}

Toyota, H. ^{[1
]}

Nakamura, S. ^{[2
]}

Yamazaki, M. ^{[3
]}

Uchitomi, N. ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Dept Elect Engn, 1603-1 Kamitomioka, Nagaoka, Niigata 9402188, Japan

[2] Aoyama Gakuin Univ, Coll Sci & Engn, Ctr Instrumental Anal, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 2520206, Japan

[3] Nagaoka Natl Coll Technol, Dept Elect & Elect Syst Engn, 888 Nishikatakai, Nagaoka, Niigata 9408532, Japan

来源：

THIN SOLID FILMS | 2017年 / 622卷

关键词：

Molecular beam epitaxy; Arsenides; Magnetic materials; SEMICONDUCTOR HETEROSTRUCTURES; TEMPERATURE FERROMAGNETISM; GAAS; EPITAXY;

D O I：

10.1016/j.tsf.2016.12.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural, magnetic, and electrical properties of InMnAs thin films were investigated to elucidate their ferromagnetism for potential applications in InP-based spintronics and magneto-optical integrated circuits. The films were prepared on InP substrates by molecular beam epitaxy at growth temperatures of 220-280 degrees C without further annealing. Except for the 220 degrees C-grown sample, the films showed ferromagnetism at room temperature. We found that the room-temperature ferromagnetism was predominantly caused by the existence of hexagonal MnAs clusters embedded in a homogeneous InMnAs matrix (InMnAs:MnAs system). High-resolution transmission electron microscope images revealed that the MnAs nanoclusters formed either elongated or round structures in the InMnAs host matrix. The experimental results indicate that the mixed systems of hexagonal MnAs embedded in InMnAs may provide potential ferromagnetic building blocks for InP-based spintronics. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：136 / 141

页数：6

共 25 条

[1] Ferromagnetism in (In, Mn)As alloy thin films [J].

Blattner, AJ ;

Wessels, BW .

APPLIED SURFACE SCIENCE, 2004, 221 (1-4) :155-159

[2] Origin of room temperature ferromagnetism in homogeneous (In,Mn)As thin films [J].

Blattner, AJ ;

Prabhumirashi, PL ;

Dravid, VP ;

Wessels, BW .

JOURNAL OF CRYSTAL GROWTH, 2003, 259 (1-2) :8-11

[3] Ferromagnetism in (In,Mn)As diluted magnetic semiconductor thin films grown by metalorganic vapor phase epitaxy [J].

Blattner, AJ ;

Wessels, BW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (04) :1582-1585

[4] A story of high-temperature ferromagnetism in semiconductors [J].

Bonanni, Alberta ;

Dietl, Tomasz .

CHEMICAL SOCIETY REVIEWS, 2010, 39 (02) :528-539

[5]

DeBoeck J, 1996, APPL PHYS LETT, V68, P2744, DOI 10.1063/1.115584

[6] Magnetic and structural properties of MnAs thin films on GaAs(111)B: Influence of the growth temperature [J].

Garcia, V. ;

Bibes, M. ;

Vodungbo, B. ;

Eddrief, M. ;

Demaille, D. ;

Marangolo, M. .

APPLIED PHYSICS LETTERS, 2008, 92 (01)

[7] MICROSTRUCTURE AND HOMOGENEITY IN (IN,MN)AS III-V-BASED DILUTED MAGNETIC SEMICONDUCTOR EPITAXIAL-FILMS [J].

GUHA, S ;

MUNEKATA, H .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) :2974-2976

[8] Tunneling magnetoresistance of MnAs thin film/GaAs/AlAs/GaAs:MnAs nanoclusters and its AlAs barrier thickness dependence [J].

Hai, Pham Nam ;

Yokoyama, Masafumi ;

Ohya, Shinobu ;

Tanaka, Masaaki .

APPLIED PHYSICS LETTERS, 2006, 89 (24)

[9] Theory of ferromagnetic (III,Mn)V semiconductors [J].

Jungwirth, T. ;

Sinova, Jairo ;

Masek, J. ;

Kucera, J. ;

MacDonald, A. H. .

REVIEWS OF MODERN PHYSICS, 2006, 78 (03) :809-864

[10] Structure and magnetism of MnAs nanocrystals embedded in GaAs as a function of post-growth annealing temperature [J].

Kwiatkowski, A. ;

Wasik, D. ;

Kaminska, M. ;

Bozek, R. ;

Szczytko, J. ;

Twardowski, A. ;

Borysiuk, J. ;

Sadowski, J. ;

Gosk, J. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (11)

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