The effect of Ge precursor on the heteroepitaxy of Ge1-xSnx epilayers on a Si (001) substrate

被引：14

作者：

Jahandar, Pedram ^{[1
]}

Weisshaupt, David ^{[2
]}

Colston, Gerard ^{[1
]}

Allred, Phil ^{[1
]}

Schulze, Jorg ^{[2
]}

Myronov, Maksym ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] Univ Stuttgart, Inst Halbleitertech IHT, Pfaffenwaldring 47, D-70569 Stuttgart, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2018年 / 33卷 / 03期

关键词：

GeSn; semiconductor; indirect-to-direct bandgap; SiGeSn; Ge1-xSnx; CVD chemical vapour deposition; GeH4 germane Ge2H6 digermane SnCl4 tintetrachloride; OPTOELECTRONICS; SILICON; LAYERS;

D O I：

10.1088/1361-6641/aa9e7e

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The heteroepitaxial growth of Ge1-xSnx on a Si (001) substrate, via a relaxed Ge buffer, has been studied using two commonly available commercial Ge precursors, Germane (GeH4) and Digermane (Ge2H6), by means of chemical vapour deposition at reduced pressures (RP-CVD). Both precursors demonstrate growth of strained and relaxed Ge1-xSnx epilayers, however Sn incorporation is significantly higher when using the more reactive Ge2H6 precursor. As Ge2H6 is significantly more expensive, difficult to handle or store than GeH4, developing high Sn content epilayers using the latter precursor is of great interest. This study demonstrates the key differences between the two precursors and offers routes to process optimisation which will enable high Sn content alloys at relatively low cost.

引用

页数：6

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