Facile preparation and enhanced photoelectrical performance of Sb2Se3 nano-rods by magnetron sputtering deposition

被引:78
作者
Liang, Guang-Xing [1 ,2 ]
Zhang, Xiang-Hua [1 ,2 ]
Ma, Hong-Li [2 ]
Hu, Ju-Guang [1 ]
Fan, Bo [1 ]
Luo, Zhong-Kuan [3 ]
Zheng, Zhuang-Hao [1 ]
Luo, Jing-Ting [1 ]
Fan, Ping [1 ]
机构
[1] Shenzhen Univ, Inst Thin Film Phys & Applicat, Coll Phys & Energy, Shenzhen 518060, Peoples R China
[2] Univ Rennes 1, CNRS, UMR 6226, Lab Glasses & Ceram,Inst Chem Sci, F-35042 Rennes, France
[3] Shenzhen Univ, Coll Chem & Chem Engn, Shenzhen 518060, Peoples R China
基金
中国国家自然科学基金;
关键词
Sb2Se3; Nano-rods; Sputtering; Chalcogenide; NANOWIRES;
D O I
10.1016/j.solmat.2016.10.042
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this work, a simple and effective method for fabricating Sb2Se3 nano-rods films by magnetron sputtering Sb2Se3 alloy target at a substrate temperature of 375 degrees C is proposed. The thermally induced regular shape and vertically arrayed nano-rods exhibits a well-crystallized structure with a preferred crystallographic orientation of (221) and a stable valence of Sb3+ and Se (2-). The obtained thin film has a band-gap of 1.32 eV and a high absorption coefficient of 10(5) cm(-1) in visible region. The photo-electrochemical measurements show that the Sb2Se3 nano-rods are p-type semiconductors with an excellent photo-response. A photovoltaic solar cell using the Sb2Se3 nano-rods film as absorber has demonstrated and a clear photovoltaic effect with an encouraging power conversion efficiency of 2.11% can be achieved.
引用
收藏
页码:257 / 262
页数:6
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