Direct writing of electronic devices on graphene oxide by catalytic scanning probe lithography

被引：87

作者：

Zhang, Kun ^{[1
]}

Fu, Qiang ^{[1
,2
]}

Pan, Nan ^{[1
]}

Yu, Xinxin ^{[1
]}

Liu, Jinyang ^{[1
]}

Luo, Yi ^{[1
,2
]}

Wang, Xiaoping ^{[1
]}

Yang, Jinlong ^{[1
]}

Hou, Jianguo ^{[1
]}

机构：

[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China

[2] Royal Inst Technol, Sch Biotechnol, Dept Theoret Chem & Biol, S-10691 Stockholm, Sweden

来源：

NATURE COMMUNICATIONS | 2012年 / 3卷

基金：

中国国家自然科学基金;

关键词：

TOTAL-ENERGY CALCULATIONS; DISSOCIATIVE CHEMISORPTION; TRANSPARENT; TRANSISTORS; REDUCTION; FILMS;

D O I：

10.1038/ncomms2200

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Reduction of graphene oxide at the nanoscale is an attractive approach to graphene-based electronics. Here we use a platinum-coated atomic force microscope tip to locally catalyse the reduction of insulating graphene oxide in the presence of hydrogen. Nanoribbons with widths ranging from 20 to 80nm and conductivities of >10(4)S m(-1) are successfully generated, and a field effect transistor is produced. The method involves mild operating conditions, and uses arbitrary substrates, atmospheric pressure and low temperatures (<= 115 degrees C).

引用

页数：6

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