Properties of AlGaAs/GaAs heterojunction bipolar transistor with AlGaAs ledge bypass capacitor

被引：3

作者：

Oh, TK ^{[1
]}

Lee, JG ^{[1
]}

Yi, KH ^{[1
]}

Baek, CH ^{[1
]}

Ihn, BU ^{[1
]}

Kang, BK ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Elect Engn, Pohang 790784, Kyungpook, South Korea

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 01期

关键词：

heterojunction bipolar transistor; thermal instability; base-ballast resistor; AlGaAs ledge;

D O I：

10.1016/S0038-1101(01)00281-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a device structure for enhancing thermal stability of a multi-finger power heterojunction bipolar transistor (HBT) with little sacrifice on RF properties. The proposed structure has an embedded base-ballast resistor and a bypass capacitor on each finger, which can be fabricated using a normal HBT process. It uses a p(+)-base layer and a depleted n-AlGaAs ledge to implement the base-ballast resistor and the bypass capacitor, respectively. Because the bypass capacitor uses the depleted AlGaAs ledge as a dielectric layer, no additional process step, except an ion-implantation process, is necessary to fabricate the structure. It is demonstrated experimentally that the thermal stability of an HBT with the proposed structure is enhanced significantly with little degradation on the RF properties. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：35 / 38

页数：4

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