Microwave dielectric properties and microstructures of La(Mg1/2Ti1/2)O3 with CuO-doped

被引:17
作者
Chen, YB [1 ]
Huang, CL [1 ]
Lo, CW [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2006年 / 128卷 / 1-3期
关键词
ceramics; oxides; X-ray diffraction; dielectric properties;
D O I
10.1016/j.mseb.2005.11.027
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of sintering aid addition on the microstructures and microwave dielectric properties of La(Mg1/2Ti1/2)O-3 ceramics were investigated. CuO was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg1/2Ti1/2)O-3 ceramics. With CuO addition, the densification temperature of La(Mg1/2Ti1/2)O-3 can be effectively reduced from 1600 to 1300-1500 degrees C. It is found that doping of CuO (1-4 wt%) can significantly improve the density and dielectric properties of La(Mg1/2Ti1/2)O-3 ceramics. Second phases were observed at the level of 1-4 wt% CuO additions. The quality factor Qxf was strongly dependent upon the amount of additions. Qxf values of 33,800 and 10,600 GHz could be obtained at 1300-1500 degrees C with I and 4 wt% CuO addition, respectively. During all addition ranges, the relative dielectric constants were different and ranged from 25.89 to 29.63. The temperature coefficient varies from -52.11 to -68.22 ppm/degrees C. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:98 / 102
页数:5
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