Microwave damage susceptibility trend of a bipolar transistor as a function of frequency

被引：21

作者：

Ma Zhen-Yang ^{[1
]}

Chai Chang-Chun ^{[1
]}

Ren Xing-Rong ^{[1
]}

Yang Yin-Tang ^{[1
]}

Chen Bin ^{[1
]}

Song Kun ^{[1
]}

Zhao Ying-Bo ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

CHINESE PHYSICS B | 2012年 / 21卷 / 09期

基金：

中国国家自然科学基金;

关键词：

bipolar transistor; high-power microwave; frequency; ELECTROMAGNETIC-INTERFERENCE; CMOS INVERTERS; EQUIPMENT;

D O I：

10.1088/1674-1056/21/9/098502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by a high-power microwave (HPM) as a function of frequency. The dependences of the burnout time and the damage power on the signal frequency are obtained. Studies of the internal damage process and the mechanism of the device are carried out from the variation analysis of the distribution of the electric field, current density, and temperature. The investigation shows that the burnout time linearly depends on the signal frequency. The current density and the electric field at the damage position decrease with increasing frequency. Meanwhile, the temperature elevation occurs in the area between the p-n junction and the n-n(+) interface due to the increase of the electric field. Adopting the data analysis software, the relationship between the damage power and frequency is obtained. Moreover, the thickness of the substrate has a significant effect on the burnout time.

引用

页数：6

共 14 条

[1] Susceptibility of electronic systems to high-power microwaves:: Summary of test experience [J].