Ultrafast Multilevel Switching in Au/YIG/n-Si RRAM

被引：26

作者：

Chen, Zhiwei ^{[1
,2
]}

Huang, Weichuan ^{[1
,2
]}

Zhao, Wenbo ^{[1
,2
]}

Hou, Chuangming ^{[1
,2
]}

Ma, Chao ^{[1
,2
]}

Liu, Chuanchuan ^{[1
,2
]}

Sun, Haoyang ^{[1
,2
]}

Yin, Yuewei ^{[1
,2
]}

Li, Xiaoguang ^{[1
,2
,3
]}

机构：

[1] Univ Sci & Technol China, Dept Phys, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China

[2] Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Anhui, Peoples R China

[3] Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

ADVANCED ELECTRONIC MATERIALS | 2019年 / 5卷 / 02期

关键词：

fast switching; multistates; unipolar resistance switching; yttrium iron garnet (YIG); RESISTIVE MEMORY; EVOLUTION; TAOX; PERFORMANCE; ENDURANCE;

D O I：

10.1002/aelm.201800418

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Resistive random access memory (RRAM) with ultrafast and multilevel switching is extremely promising for next-generation nonvolatile memory. Here, ultrafast unipolar resistive switchings (approximate to 540 ps) with high off/on resistance ratio (approximate to 10(4)) are obtained in yttrium iron garnet Y3Fe5O12 (YIG)-based resistive memory on n-Si substrate. The sub-nanosecond operation is also successfully performed up to 85 degrees C with an off/on resistance ratio of approximate to 10(3). In addition, by using different compliance currents for the set process, five discrete resistance levels with ultrafast switchings among them are achieved and the multilevel states show reliable retention (>10(4) s) The large, stable, reproducible, and reliable switching behaviors of the Au/YIG/n-Si RRAM cell shows its great potential for ultrafast multilevel memory applications.

引用

页数：7

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