Proton-irradiation Effects on Charge Trapping-related Instability of Normally-off AIGaN/GaN Recessed MISHFETs

被引：2

作者：

Keum, Dongmin ^{[1
]}

Kim, Hyungtak ^{[1
]}

机构：

[1] Hongik Univ, Sch Elect & Elect Engn, Seoul 04066, South Korea

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2019年 / 19卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

Gallium nitride(GaN); proton irradiation; charge trapping; instability; MISHFET; Normally-off; DISPLACEMENT DAMAGE; ALGAN/GAN HEMTS; GAN;

D O I：

10.5573/JSTS.2019.19.2.214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated proton-irradiation effects on the charge trapping-related instability of normally-off AIGaN/GaN recessed MISHFETs. The reduction of drain current (I-D) by 57.3 % and the shift of threshold voltage (Vth) by 1.5 V were induced by 5 MeV proton irradiation with a total dose of 5 x 10(14) cm(-2). Short-term DC voltage stress tests were carried out before and after irradiation in order to investigate how temporary instability caused by the charge trapping could be affected by the proton irradiation. The increase in the interface trap density was probed by capture emission time (CET) map and conductance method, whereas the breakdown voltage was increased after proton irradiation. TCAD simulation using Silvaco Atlas showed the reduction of lateral electric field of gate edge at drain side after proton irradiation as well as the increase of lateral electric field in the access region where charge trapping mostly occurs. Radiation effect can worsen the device instability by increasing interface traps and electric field in the access region.

引用

页码：214 / 219

页数：6

共 23 条

[11] Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on Sic [J].

Meneghesso, G ;

Pierobon, R ;

Rampazzo, F ;

Tamiazzo, G ;

Zanoni, E ;

Kordos, JBP ;

Basile, AF ;

Chini, A ;

Verzelles, G .

2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL, 2005, :415-422

[12]

Meneghini M., 2017, P IEEE INT REL PHYS, p3B

[13] AlGaN/GaN HEMTs - An overview of device operation and applications [J].

Mishra, UK ;

Parikh, P ;

Wu, YF .

PROCEEDINGS OF THE IEEE, 2002, 90 (06) :1022-1031

[14] GaN for space application: almost ready for flight [J].

Muraro, Jean-Luc ;

Nicolas, Guillaume ;

Do Minh Nhut ;

Forestier, Stephane ;

Rochette, Stephane ;

Vendier, Olivier ;

Langrez, Dominique ;

Cazaux, Jean-Louis ;

Feudale, Marziale .

INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2010, 2 (01) :121-133

[15] Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage [J].

Patrick, Erin ;

Law, Mark E. ;

Liu, Lu ;

Cuervo, Camilo Velez ;

Xi, Yuyin ;

Ren, Fan ;

Pearton, Stephen J. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (06) :4103-4108

[16] Review-Ionizing Radiation Damage Effects on GaN Devices [J].

Pearton, S. J. ;

Ren, F. ;

Patrick, Erin ;

Law, M. E. ;

Polyakov, Alexander Y. .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2016, 5 (02) :Q35-Q60

[17]

Schroder D.K., 2006, Semiconductor Material and Device Characterization, V3rd, P347

[18] Review of displacement damage effects in silicon devices [J].

Srour, JR ;

Marshall, CJ ;

Marshall, PW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (03) :653-670

[19] DISPLACEMENT DAMAGE IN GAAS STRUCTURES [J].

SUMMERS, GP ;

BURKE, EA ;

XAPSOS, MA ;

DALE, CJ ;

MARSHALL, PW ;

PETERSEN, EL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1221-1226

[20] Spatial Analysis of Galactic Cosmic Ray Particles in Low Earth Orbit/Near Equator Orbit Using SPENVIS [J].

Suparta, W. ;

Zulkeple, S. K. .

2014 INTERNATIONAL CONFERENCE ON SCIENCE & ENGINEERING IN MATHEMATICS, CHEMISTRY AND PHYSICS (SCIETECH 2014), 2014, 495

← 1 2 3 →