Proton-irradiation Effects on Charge Trapping-related Instability of Normally-off AIGaN/GaN Recessed MISHFETs

被引：2

作者：

Keum, Dongmin ^{[1
]}

Kim, Hyungtak ^{[1
]}

机构：

[1] Hongik Univ, Sch Elect & Elect Engn, Seoul 04066, South Korea

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2019年 / 19卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

Gallium nitride(GaN); proton irradiation; charge trapping; instability; MISHFET; Normally-off; DISPLACEMENT DAMAGE; ALGAN/GAN HEMTS; GAN;

D O I：

10.5573/JSTS.2019.19.2.214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated proton-irradiation effects on the charge trapping-related instability of normally-off AIGaN/GaN recessed MISHFETs. The reduction of drain current (I-D) by 57.3 % and the shift of threshold voltage (Vth) by 1.5 V were induced by 5 MeV proton irradiation with a total dose of 5 x 10(14) cm(-2). Short-term DC voltage stress tests were carried out before and after irradiation in order to investigate how temporary instability caused by the charge trapping could be affected by the proton irradiation. The increase in the interface trap density was probed by capture emission time (CET) map and conductance method, whereas the breakdown voltage was increased after proton irradiation. TCAD simulation using Silvaco Atlas showed the reduction of lateral electric field of gate edge at drain side after proton irradiation as well as the increase of lateral electric field in the access region where charge trapping mostly occurs. Radiation effect can worsen the device instability by increasing interface traps and electric field in the access region.

引用

页码：214 / 219

页数：6

共 23 条

[1] High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors [J].

Aktas, O ;

Fan, ZF ;

Mohammad, SN ;

Botchkarev, AE ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1996, 69 (25) :3872-3874

[2] Effects of Short-Term DC-Bias-Induced Stress on n-GaN/AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited Al2O3 as a Gate Dielectric [J].

Basu, Sarbani ;

Singh, Pramod K. ;

Lin, Shun-Kuan ;

Sze, Po-Wen ;

Wang, Yeong-Her .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (11) :2978-2987

[3] Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs [J].

Chen, Jin ;

Puzyrev, Yevgeniy S. ;

Jiang, Rong ;

Zhang, En Xia ;

McCurdy, Michael W. ;

Fleetwood, Daniel M. ;

Schrimpf, Ronald D. ;

Pantelides, Sokrates T. ;

Arehart, Aaron R. ;

Ringel, Steven A. ;

Saunier, Paul ;

Lee, Cathy .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (06) :2423-2430

[4] Bias-stress-induced trapping effect of high-voltage field-plated AlGaN/GaN-on-Si heterostructure FETs [J].

Choi, Shinhyuk ;

Lee, Jae-Gil ;

Cha, Ho-Young ;

Kim, Hyungtak .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 62 (06) :954-958

[5] The toughest transistor yet [J].

Eastman, LF ;

Mishra, UK .

IEEE SPECTRUM, 2002, 39 (05) :28-+

[6] High-temperature performance of AlGaN/GaN HFET's on SiC substrates [J].

Gaska, R ;

Chen, Q ;

Yang, J ;

Osinsky, A ;

Khan, MA ;

Shur, MS .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (10) :492-494

[7] Proton Bombardment Effects on Normally-off AlGaN/GaN-on-Si Recessed MISHeterostructure FETs [J].

Keum, Dong Min ;

Cha, Ho-Young ;

Kim, Hyungtak .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (06) :3362-3368

[8]

Lagger P., 2012, IEDM, P299, DOI 10.1109/IEDM.2012.6479033

[9] Proton Irradiation Effects on AlGaN/AlN/GaN Heterojunctions [J].

Lv, Ling ;

Ma, Xiaohua ;

Zhang, Jincheng ;

Bi, Zhen ;

Liu, Linyue ;

Shan, Hengsheng ;

Hao, Yue .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (01) :300-305

[10] Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors [J].

Lv, Ling ;

Ma, J. G. ;

Cao, Y. R. ;

Zhang, J. C. ;

Zhang, W. ;

Li, L. ;

Xu, S. R. ;

Ma, X. H. ;

Ren, X. T. ;

Hao, Y. .

MICROELECTRONICS RELIABILITY, 2011, 51 (12) :2168-2172

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