Total ionizing dose effects on the analog performance of a 0.13 μm CMOS technology

被引：0

作者：

Re, V ^{[1
]}

Manghisoni, M ^{[1
]}

Ratti, L ^{[1
]}

Speziali, V ^{[1
]}

Traversi, G ^{[1
]}

机构：

[1] Univ Bergamo, Dipartimento Ing Ind, I-24044 Dalamine, BG, Italy

来源：

NSREC: 2005 IEEE Radiation Effects Data Workshop, Workshop Record | 2005年

关键词：

deep submicron; MOSFET; noise; ionizing radiation;

D O I：

暂无

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

This paper presents a study of the ionizing radiation tolerance of static, signal and noise characteristics of 0.13 mu m CMOS transistors, in the context of designing rad-hard analog integrated circuits. Device parameters were monitored before and after irradiation with (CO)-C-60 gamma-rays at a 10 Mrad(SiO2) total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.

引用

页码：122 / 126

页数：5

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