Open circuit voltage decay lifetime of ion irradiated devices

被引：28

作者：

Vobecky, J ^{[1
]}

Hazdra, P ^{[1
]}

Záhlava, V ^{[1
]}

机构：

[1] Czech Tech Univ, Microelect Dept, CZ-16627 Prague 6, Czech Republic

来源：

MICROELECTRONICS JOURNAL | 1999年 / 30卷 / 06期

关键词：

open circuit voltage decay; carrier lifetime; ion irradiation;

D O I：

10.1016/S0026-2692(98)00173-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Open circuit voltage decay method for measuring of excess carrier Lifetime is shown to be effective for in-process checking of ion irradiated power diodes. 2.5 kV/100 A P-i-N diodes irradiated by helium ions with different irradiation energies and doses were used for presentation of capabilities of this method. Differences in carrier dynamics during the OCVD process between unirradiated and irradiated devices were studied by use of the device simulation in ATLAS. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：513 / 520

页数：8

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