Structural and pyroelectric properties of sol-gel derived multiferroic BFO thin films

被引：35
作者：
Jo, Seo-Hyeon [1 ]
Lee, Sung-Gap [1 ]
Lee, Seung-Hwan [2 ]
机构：
[1] Gyeongsang Natl Univ, Dept Ceram Engn, Eng Res Inst, Jinju 660701, Gyeongnam, South Korea
[2] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea
来源：
MATERIALS RESEARCH BULLETIN | 2012年 / 47卷 / 02期
关键词：
Ceramics; Multilayer; Thin films; Ferroelectricity; ELECTRICAL-PROPERTIES; BIFEO3; NANOSTRUCTURES; DEPOSITION; SUBSTRATE; CERAMICS;
D O I：
10.1016/j.materresbull.2011.11.009
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Multiferroic BFO/PZT multilayer films were fabricated by spin-coating method on the (1 1 1)Pt/Ti/SiO2/Si substrate alternately using PZT(30/70), PZT(70/30) and BFO alkoxide solutions. The structural and ferroelectric properties were investigated for uncooled infrared detector applications. The coating and heating procedure was repeated six times to form BFO/PZT multilayer films. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as Bi2Fe4O3. The thickness of BFO/PZT multilayer film was about 200-220 nm. The ferroelectric properties such as dielectric constant, remnant polarization and pyroelectric coefficient were superior to those of single composition BFO film, and those values for BFO/PZT(70/30) multilayer film were 288, 15.7 mu C/cm(2) and 9.1 x 10(-9) C/cm(2) K at room temperature, respectively. Leakage current density of the BFO/PZT(30/70) multilayer film was 3.3 x 10(-9) A/cm(2) at 150 kV/cm. The figures of merit, F-v for the voltage responsivity and F-D for the specific detectivity, of the BFO/PZT(70/30) multilayer film were 6.17 x 10(-11) Ccm/J and 6.45 x 10(-9) Ccm/J, respectively. (C) 2011 Elsevier Ltd. All rights reserved.
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页码：409 / 412
页数：4
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