InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

被引：22

作者：

Craig, A. P. ^{[1
]}

Thompson, M. D. ^{[1
]}

Tian, Z-B ^{[2
]}

Krishna, S. ^{[2
]}

Krier, A. ^{[1
]}

Marshall, A. R. J. ^{[1
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] Univ New Mexico, Dept Elect & Comp Engn, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2015年 / 30卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

nBn; dark currents; 1/f noise; IMF; specific detectivity;

D O I：

10.1088/0268-1242/30/10/105011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InAsSb nBn detector structure was grown on both GaAs and native GaSb substrates. Temperature dependent dark current, spectral response, specific detectivity (D*) and noise spectral density measurements were then carried out. Shot-noise-limited D*figures of 1.2 x 10(10) Jones and 3.0 x 10(10) Jones were calculated (based upon the sum of dark current and background photocurrent) for the sample grown on GaAs and the sample grown on GaSb, respectively, at 200 K. Noise spectral density measurements revealed knee frequencies of between 124-337 Hz and similar to 8 Hz, respectively. Significantly, these devices could support focal plane arrays capable of operating under thermoelectric cooling.

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