Study on vacancy-type defects in SIMP steel induced by separate and sequential H and He ion implantation

被引:26
作者
Jin, Peng [1 ,2 ]
Shen, Tielong [1 ,2 ]
Cui, Minghuan [1 ,2 ]
Zhu, Yabin [1 ,2 ]
Li, Bingsheng [1 ]
Zhang, Tongmin [1 ]
Li, Jinyu [1 ]
Jin, Shuoxue [3 ]
Lu, Eryang [3 ]
Cao, Xingzhong [3 ]
Wang, Zhiguang [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
[2] Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing 100049, Peoples R China
[3] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
Helium/hydrogen implantation; Positron annihilation; Vacancy defects; SIMP steel; FERRITIC/MARTENSITIC STEEL; IRRADIATION CONDITIONS; HYDROGEN; HELIUM; FUSION; RETENTION; DEUTERIUM; EVOLUTION; FISSION; METALS;
D O I
10.1016/j.jnucmat.2019.04.012
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
To provide a basic understanding of the synergy effect of hydrogen and helium on structural materials for future advanced nuclear systems, the vacancy-type defects in SIMP steel induced by separate and sequential H and He implantation at room temperature was investigated using positron annihilation Doppler broadening spectroscopy (DBS) and transmission electron microscopy (TEM). The DBS results indicated that, when implanted by H and He separately, the Delta S parameter of the H-implanted sample was greater than that of He, although the damage level (that is, the displacement per atom) induced by H was lower than that induced by He. This could indicate that He is more easily trapped by vacancy than H and prefers to occupy the center of the vacancy. When sequentially co-implanted by He and H, whatever the implantation sequence, the Delta S parameter was lower than that of H-only implantation. In addition, the Delta S parameter of sequential He + H implantation was greater than that of H + He implantation when the dose of H was sufficiently high. Combined with the TEM results, the synergistic effects of He and H on vacancy-type defect evolution are discussed. (C) 2019 Elsevier B.V. All rights reserved.
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页码:131 / 139
页数:9
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