A rapid growth of aligned carbon nanotube films and high-aspect-ratio arrays

The remarkable properties of carbon nanotubes (CNTs) make them attractive for microelectronic applications, especially for interconnects and nanoscale devices. In this paper, we report an efficient process to grow well-aligned CNT Films and high-aspect-ratio CNT arrays with very high area distribution density (> 1600 mu m(-2)). Chemical vapor deposition (CVD) was invoked to deposit highly aligned CNTs on Al2O3/Fe coated silicon substrates of several square centimeter area using ethylene as the carbon source, and argon and hydrogen as carrier gases. The nanotubes grew at a high rate of -100 mu m/min. for nanotube films at 800 degrees C, while the nanotube arrays grew at -140 mu m/min. even at 750 degrees C, due to the base growth mode. The CNTs were characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS). The results demonstrated that the CNTs are of high purity and form densely aligned arrays with controllable size and height. The as-grown CNT structures have considerable potential for thermal management and electrical interconnects for microelectronic devices.