Features of the Vapor-Phase Epitaxy of GaAs on Nonplanar Substrates

被引：0

作者：

Drozdov, Yu. N. ^{[1
]}

Kraev, S. A. ^{[1
]}

Okhapkin, A. I. ^{[1
]}

Daniltsev, V. M. ^{[1
]}

Skorokhodov, E. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2020年 / 54卷 / 09期

关键词：

plasma-chemical etching of GaAs; narrow grooves; epitaxy of GaAs in grooves;

D O I：

10.1134/S1063782620090080

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The features of the surface shape of GaAs epitaxial layers grown on grooves several micrometers wide with vertical walls and an aspect ratio close to unity are investigated. The grooves are formed on the surface of a GaAs wafer in a plasma-chemical etching installation and overgrown by organometallic vapor-phase epitaxy under reduced pressure in a reactor.

引用

页码：1147 / 1149

页数：3