Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs

被引：1

作者：

Huang, Qin ^{[1
]}

Liu, Renhua ^{[1
]}

Sun, Yabin ^{[1
]}

Li, Xiaojin ^{[1
]}

Shi, Yanling ^{[1
]}

Wang, Changfeng ^{[2
]}

Liao, Duanduan ^{[2
]}

Tian, Ming ^{[2
]}

机构：

[1] East China Normal Univ, Dept Elect Engn, Key Lab Multidimens Informat Proc, Shanghai 200241, Peoples R China

[2] Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R China

来源：

SCIENCE CHINA-INFORMATION SCIENCES | 2019年 / 62卷 / 06期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1007/s11432-018-9791-2

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页数：3

共 6 条

[1] Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28 nm node and beyond [J].

Doris, B. ;

DeSalvo, B. ;

Cheng, K. ;

Morin, P. ;

Vinet, M. .

SOLID-STATE ELECTRONICS, 2016, 117 :37-59

[2]

Narayanan MR, 2016, INT CONF ADV SEMICON, P61, DOI 10.1109/ASDAM.2016.7805895

[3] Multi-VT UTBB FDSOI Device Architectures for Low-Power CMOS Circuit [J].

Noel, Jean-Philippe ;

Thomas, Olivier ;

Jaud, Marie-Anne ;

Weber, Olivier ;

Poiroux, Thierry ;

Fenouillet-Beranger, Claire ;

Rivallin, Pierrette ;

Scheiblin, Pascal ;

Andrieu, Francois ;

Vinet, Maud ;

Rozeau, Olivier ;

Boeuf, Frederic ;

Faynot, Olivier ;

Amara, Amara .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (08) :2473-2482

[4]

Ping H, 2002, 2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, P55, DOI 10.1109/SOI.2002.1044414

[5] Heat generation and transport in nanometer-scale transistors [J].

Pop, Eric ;

Sinha, Sanjiv ;

Goodson, Kenneth E. .

PROCEEDINGS OF THE IEEE, 2006, 94 (08) :1587-1601

[6] Impact of self-heating effects on nanoscale Ge p-channel FinFETs with Si substrate [J].

Yin, Longxiang ;

Shen, Lei ;

Jiang, Hai ;

Du, Gang ;

Liu, Xiaoyan .

SCIENCE CHINA-INFORMATION SCIENCES, 2018, 61 (06)

← 1 →