Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review

被引：12

作者：

Pradeepkumar, Aiswarya ^{[1
]}

Gaskill, D. Kurt ^{[2
]}

Iacopi, Francesca ^{[1
,3
]}

机构：

[1] Univ Technol Sydney, Fac Engn & IT, Sydney, NSW 2007, Australia

[2] Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA

[3] Univ Technol Sydney, Fac Engn & IT, ARC Ctr Excellence Future Low Energy Elect Techno, Sydney, NSW 2007, Australia

来源：

APPLIED SCIENCES-BASEL | 2020年 / 10卷 / 12期

关键词：

epitaxial graphene; SiC; 3C-SiC on Si; substrate interaction; carrier concentration; mobility; intercalation; buffer layer; surface functionalization; FIELD-EFFECT TRANSISTORS; BILAYER GRAPHENE; RAMAN-SCATTERING; BERRYS PHASE; FACE; MASS; GAS; TEMPERATURE; EVOLUTION; DEVICES;

D O I：

10.3390/app10124350

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The electronic and transport properties of epitaxial graphene are dominated by the interactions the material makes with its surroundings. Based on the transport properties of epitaxial graphene on SiC and 3C-SiC/Si substrates reported in the literature, we emphasize that the graphene interfaces formed between the active material and its environment are of paramount importance, and how interface modifications enable the fine-tuning of the transport properties of graphene. This review provides a renewed attention on the understanding and engineering of epitaxial graphene interfaces for integrated electronics and photonics applications.

引用

页码：1 / 32

页数：32

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