A Bandgap Reference in 65 nm CMOS with Low Threshold Voltage MOSFET

被引：1
|
作者：
Zhang Jun-An [1 ,2 ]
Li Guangjun [1 ]
Zhang Ruitao [2 ]
Li Xi [3 ]
Fu Dongbing [3 ]
Yan Bo [1 ]
机构：
[1] Univ Elect Sci & Technol China, Coll Commun & Informat Engn, Chengdu 611731, Sichuan, Peoples R China
[2] Key Lab Analog Integrated Circuit, Chongqing 401332, Peoples R China
[3] Chongqing Acoust Opt Elect CO LTD, Chongqing 401332, Peoples R China
来源：
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2017年 / 12卷 / 12期
基金：
中国国家自然科学基金;
关键词：
Bandgap Reference Circuit; Low Threshold Voltage MOSFET; Low Voltage Circuit Design Technique; Large Temperature Range;
D O I：
10.1166/jno.2017.2137
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A bandgap reference circuit with both voltage output and current output is presented. Low threshold voltage MOSFET have been utilized to ensure the circuit at suitable DC operation points under extreme low temperature. Operational transconductance amplifier (OTA) has been used to achieve high DC power supply rejection rate (PSRR). Two opposite temperature coefficient resistors have been connected in series to obtain a one-order temperature independent resistor which also achieves a weak curvature compensation effect for the reference voltage generation. This bandgap reference is implemented in a 65 nm CMOS technology, occupies 0.75 mm x 67 mm including bond pads, Measured results show that this circuit can operate at supply voltage from 1.1 V to 1.3 V, and the temperature coefficient of voltage output is 30 ppm/degrees C with 60 dB PSRR (DC, 30 degrees C), and the temperature coefficient of current output is 52 ppm/degrees C with 70 dB PSRR (DC, 30 degrees C), among -55 degrees C similar to 125 degrees C without any trimming or calibration.
引用
收藏
页码：1384 / 1390
页数：7
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