Hot-Carrier Effect on Amorphous In-Ga-Zn-O Thin-Film Transistors With a Via-Contact Structure

被引：29

作者：

Hsieh, Tien-Yu ^{[1
]}

Chang, Ting-Chang ^{[1
,2
]}

Chen, Yu-Te ^{[3
]}

Liao, Po-Yung ^{[1
]}

Chen, Te-Chih ^{[1
]}

Tsai, Ming-Yen ^{[3
]}

Chen, Yu-Chun ^{[1
]}

Chen, Bo-Wei ^{[3
]}

Chu, Ann-Kuo ^{[3
]}

Chou, Cheng-Hsu ^{[4
]}

Chung, Wang-Cheng ^{[4
]}

Chang, Jung-Fang ^{[4
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 80424, Taiwan

[4] Chimei Innolux Corp, Prod Technol Ctr, Tainan 74147, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 05期

关键词：

Dual gate; hot carrier; indium gallium zinc oxide (IGZO); thin-film transistors (TFTs); via-contact;

D O I：

10.1109/LED.2013.2248341

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of hot carriers on the characteristics of via-contact-type amorphous In-Ga-Zn-O thin-film transistors is investigated. After hot-carrier stress, the gate-to-source capacitance curve shows a two-stage rise while the gate-to-drain capacitance curve exhibits parallel shifts. It is found that hot electrons are injected into the etch-stop layer or trapped at the InGaZnO/etch-stop layer interface below redundant drain electrode. This is further verified by measuring the characteristic capacitance curve with a positive top gate bias.

引用

页码：638 / 640

页数：3

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