Fabrication of GaN-Based White Light-Emitting Diodes on Yttrium Aluminum Garnet-Polydimethylsiloxane Flexible Substrates

被引：18

作者：

Chen, Lung-Chien ^{[1
]}

Lin, Wen-Wei ^{[1
]}

Chen, Jun-Wei ^{[1
]}

机构：

[1] Natl Univ Technol, Dept Electroopt Engn, Taipei 106, Taiwan

来源：

ADVANCES IN MATERIALS SCIENCE AND ENGINEERING | 2015年 / 2015卷

关键词：

LEDS;

D O I：

10.1155/2015/537163

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study concerns the characteristics of white GaN-based light-emitting diode (LED) on flexible substrates. The thin film GaN-based blue LEDs were directly transferred from sapphire onto the flexible polydimethylsiloxane (PDMS) substrates by laser lift-off (LLO) process. The PDMS substrates were incorporated 10-40% cerium doped yttrium aluminum garnet phosphor, YAG:Ce3+, and formed the GaN-based white LEDs. The white LEDs prepared by the GaN-based LEDs on the YAG-PDMS substrates reveal one peak at 470nm corresponding to the emission of the GaN-based LED and a broadband included five weak peaks caused by YAG:Ce3+ phosphors.

引用

页数：5

共 18 条

[1] Relaxation of Stress in GaN-Based Light-Emitting Diodes on Stainless Steel Substrate by Plasma Etching Using a Mask of Silver Nanoparticles [J].

Chen, Lung-Chien ;

Lin, Wun-Wei ;

Chiou, Chung-An .

SCIENCE OF ADVANCED MATERIALS, 2014, 6 (06) :1179-1183

[2] Transfer of GaN LEDs From Sapphire to Flexible Substrates by Laser Lift-Off and Contact Printing [J].

Chun, Jaeyi ;

Hwang, Youngkyu ;

Choi, Yong-Seok ;

Jeong, Tak ;

Baek, Jong Hyeob ;

Ko, Heung Cho ;

Park, Seong-Ju .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2012, 24 (23) :2115-2118

[3] Improved thermal management of GaN/sapphire light-emitting diodes embedded in reflective heat spreaders [J].

Horng, R. H. ;

Chiang, C. C. ;

Hsiao, H. Y. ;

Zheng, X. ;

Wuu, D. S. ;

Lin, H. I. .

APPLIED PHYSICS LETTERS, 2008, 93 (11)

[4] Novel Device Design for High-Power InGaN/Sapphire LEDs Using Copper Heat Spreader With Reflector [J].

Horng, Ray-Hua ;

Hsiao, Hsiang-Yun ;

Chiang, Cheng-Chung ;

Wuu, Dong-Sing ;

Tsai, Yu-Li ;

Lin, Heng-I. .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (04) :1281-1286

[5]

Hsu C.-H., 2014, INT J PHOTOENERGY, V2014

[6] Separating InGaN membranes from GaN/sapphire templates through a crystallographic-etch-limited process [J].

Jiang, Ren-Hao ;

Lin, Chia-Feng ;

Huang, Yu-Chieh ;

Fan, Feng-Hsu ;

Wu, Kaun-Chun ;

Wang, Jing-Hao ;

Cheng, Po-Fu ;

Yang, Chung-Chieh .

RSC ADVANCES, 2013, 3 (32) :13446-13450

[7] Characteristic optical properties of transparent color conversion film prepared from YAG:Ce3+ nanoparticles [J].

Kasuya, R. ;

Kawano, A. ;

Isobe, T. .

APPLIED PHYSICS LETTERS, 2007, 91 (11)

[8] Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting [J].

Kim, Hoon-sik ;

Brueckner, Eric ;

Song, Jizhou ;

Li, Yuhang ;

Kim, Seok ;

Lu, Chaofeng ;

Sulkin, Joshua ;

Choquette, Kent ;

Huang, Yonggang ;

Nuzzo, Ralph G. ;

Rogers, John A. .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2011, 108 (25) :10072-10077

[9]

Kim RH, 2010, NAT MATER, V9, P929, DOI [10.1038/NMAT2879, 10.1038/nmat2879]

[10] Effect of Residual Stress of Thin and Thick Layers on Laser Lifted-Off Light Emitting Diodes [J].

Kim, Sunjung .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (09) :H904-H907

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