Thermal and Photo Sensing Capabilities of Mono- and Few-Layer Thick Transition Metal Dichalcogenides

被引:7
作者
Voshell, Andrew [1 ,2 ]
Terrones, Mauricio [3 ]
Rana, Mukti [1 ,2 ]
机构
[1] Delaware State Univ, Div Phys Engn Math & Comp Sci, Dover, DE 19901 USA
[2] Delaware State Univ, Opt Sci Ctr Appl Res, Dover, DE 19901 USA
[3] Penn State Univ, Dept Phys Chem & Mat Sci & Engn, University Pk, PA 16802 USA
关键词
transition metal dichalcogenides; semiconductor; monolayer; temperature sensor; photodetector; band gap; thermocouple; broadband; THERMOELECTRIC PROPERTIES; MOS2; CONDUCTIVITY; GRAPHENE; WS2; PHOTODETECTOR; MONOLAYER; HETEROJUNCTION; PHOTOLUMINESCENCE; OPTOELECTRONICS;
D O I
10.3390/mi11070693
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Two-dimensional (2D) materials have shown promise in various optical and electrical applications. Among these materials, semiconducting transition metal dichalcogenides (TMDs) have been heavily studied recently for their photodetection and thermoelectric properties. The recent progress in fabrication, defect engineering, doping, and heterostructure design has shown vast improvements in response time and sensitivity, which can be applied to both contact-based (thermocouple), and non-contact (photodetector) thermal sensing applications. These improvements have allowed the possibility of cost-effective and tunable thermal sensors for novel applications, such as broadband photodetectors, ultrafast detectors, and high thermoelectric figures of merit. In this review, we summarize the properties arisen in works that focus on the respective qualities of TMD-based photodetectors and thermocouples, with a focus on their optical, electrical, and thermoelectric capabilities for using them in sensing and detection.
引用
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页数:20
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