The effect of the top electrode interface on the hysteretic behavior of epitaxial ferroelectric Pb(Zr,Ti)O3 thin films with bottom SrRuO3 electrode

被引:18
作者
Pintilie, L. [1 ]
Pasuk, I. [1 ]
Negrea, R. [1 ]
Filip, L. D. [1 ]
Pintilie, I. [1 ]
机构
[1] Natl Inst Mat Phys, Bucharest 077125, Romania
关键词
LEVEL TRANSIENT SPECTROSCOPY; TRAPS; CAPACITORS; DEPENDENCE; THICKNESS; SURFACES; STATES;
D O I
10.1063/1.4754318
中图分类号
O59 [应用物理学];
学科分类号
摘要
The hysteretic behavior of the epitaxial Pb(Zr,Ti)O-3 thin films with different top metal electrodes is studied, with emphasis on the influence of the leakage current and trap generation current on the shape of the loop as well as on the magnitude of the measured polarization. Cu, Pt, and SrRuO3 were used as top contacts and important differences were observed for measurements performed in both dynamic and static modes, although the contacts were deposited on the same epitaxial Pb(Zr,Ti)O-3 film grown on SrRuO3/SrTiO3 substrate. A peculiar behavior was observed especially for the static hysteresis loops where, depending of the top contact, the loop is influenced mainly by the leakage current (Pt) or by the trap generation current (Cu and SrRuO3). The last one can contribute with an additive charge, having a linear dependence on the applied voltage, as suggested by the simple model developed to explain the abnormally high values of the dielectric constant extracted from the linear part of the static hysteresis loop. It is concluded that the properties of the top electrode interface can significantly impact the hysteretic behavior of the ferroelectric films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754318]
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页数:7
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共 35 条
[1]   Dependence of polarization on epitaxial strain in ferroelectric ultrathin films from first principles [J].
Bin-Omran, S. ;
Ponomareva, I. ;
Bellaiche, L. .
PHYSICAL REVIEW B, 2008, 77 (14)
[2]   Competition between ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O3 thin films deposited by sol-gel [J].
Boerasu, I ;
Pintilie, L ;
Pereira, M ;
Vasilevskiy, MI ;
Gomes, MJM .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (08) :4776-4783
[3]   Investigation of thickness dependence of the ferroelectric properties of Pb(Zr0.6Ti0.4)O3 thin-film capacitors -: art. no. 034102 [J].
Bouregba, R ;
Le Rhun, G ;
Poullain, G ;
Leclerc, G .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (03)
[4]   EFFECT OF INTERFACE STATES ON THE ELECTRICAL-PROPERTIES OF W, WSIX, AND WALX SCHOTTKY CONTACTS ON GAAS [J].
CALLEGARI, A ;
RALPH, D ;
BRASLAU, N ;
LATTA, E ;
SPIERS, GD .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (12) :4812-4820
[5]   Domain switching and spatial dependence of permittivity in ferroelectric thin films [J].
Chai, FK ;
Brews, JR ;
Schrimpf, RD ;
Birnie, DP .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2505-2516
[6]   Time-dependent and trap-related current conduction mechanism in ferroelectric Pb(ZrxTi1-x)O-3 films [J].
Chen, HM ;
Lan, JM ;
Chen, JL ;
Lee, YYM .
APPLIED PHYSICS LETTERS, 1996, 69 (12) :1713-1715
[7]   Leakage current evolution versus dielectric thickness in lead zirconate titanate thin film capacitors [J].
Chentir, Mohamed-Tahar ;
Bouyssou, Emilien ;
Ventura, Laurent ;
Anceau, Christine .
JOURNAL OF APPLIED PHYSICS, 2009, 105 (06)
[8]   SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].
COWLEY, AM ;
SZE, SM .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&
[9]   SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES [J].
CROWELL, CR ;
SHORE, HB ;
LABATE, EE .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3843-&
[10]   Transient-current measurement of the trap charge density at interfaces of a thin-film metal/ferroelectric/metal structure [J].
Delimova, LA ;
Grekhov, IV ;
Mashovets, DV ;
Tyaginov, SE ;
Shin, S ;
Koo, JM ;
Kim, SP ;
Park, Y .
APPLIED PHYSICS LETTERS, 2005, 87 (19) :1-3