Fabrication and characterization of ZnO nanowires by wet oxidation of Zn thin film deposited on Teflon substrate

被引：18

作者：

Farhat, O. F. ^{[1
]}

Halim, M. M. ^{[1
]}

Abdullah, M. J. ^{[1
]}

Ali, M. K. M. ^{[2
]}

Ahmed, Naser M. ^{[1
]}

Bououdina, M. ^{[3
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town 11800, Malaysia

[2] Al Imam Mohammad Ibn Saud Islamic Univ, Coll Sci, Dept Phys, Riyadh, Saudi Arabia

[3] Univ Bahrain, Dept Phys, Coll Sci, Zallaq, Bahrain

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 86卷

关键词：

ZnO; Nanowires; Wet oxidation; Photodetector; Response time; Recovery time; ZINC-OXIDE NANOSTRUCTURES; PHOTOLUMINESCENCE PROPERTIES; THERMAL EVAPORATION; NANORODS; TEMPERATURE; ATMOSPHERE; PRECURSORS; GROWTH;

D O I：

10.1016/j.spmi.2015.07.056

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this study, ZnO nanowires (NWs) were successfully grown for the first time on to Teflon substrate by a wet oxidation of a Zn thin film coated by RF sputtering technique. The sputtered Zn thin film was oxidized at 100 degrees C for 5 h under water-vapour using a horizontal furnace. This oxidation process transformed Zn thin film into ZnO with wire-like nanostructure. XRD analysis confirms the formation of single nanocrystalline ZnO phase having a low compressive strain. FESEM observations reveal high density of ZnO NWs with diameter ranging from 34 to 52 nm and length about 2.231 mu m, which are well distributed in different direction. A flexible ZnO NWs-based metal-semiconductor-metal UV photodetector was fabricated. Photo-response and sensitivity measurements under low power illumination (375 nm, 1.5 mW/cm(2)) showed a high sensitivity of 2050%, which can be considered a relatively fast response and baseline recovery for UV detection. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：236 / 242

页数：7

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