Improved analysis and modeling of low-frequency noise in nanoscale MOSFETs

被引：52

作者：

Ioannidis, E. G. ^{[1
,3
]}

Dimitriadis, C. A. ^{[1
]}

Haendler, S. ^{[2
]}

Bianchi, R. A. ^{[2
]}

Jomaah, J. ^{[3
]}

Ghibaudo, G. ^{[3
]}

机构：

[1] Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece

[2] ST Microelect, F-38921 Crolles, France

[3] MINATEC INPG, IMEP LAHC, F-38016 Grenoble, France

来源：

SOLID-STATE ELECTRONICS | 2012年 / 76卷

关键词：

Analysis; Modeling; Low-frequency noise; Nanoscale; MOSFETs; THIN-FILM TRANSISTORS; MOS-TRANSISTORS; MOBILITY; FINFETS; ORIGIN; DC;

D O I：

10.1016/j.sse.2012.05.035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Extensive investigation of the low-frequency noise in n-channel and p-channel MOSFETs, with high-k gate stack and channel length varying from 1.8 mu m down to 26.4 nm, has been carried out. The results demonstrate that the carrier number fluctuation with correlated mobility fluctuations describes accurately and continuously the 1/f noise for all operation regions, i.e. from weak to strong inversion and from linear to saturation. It has been found that the product of the Coulomb scattering coefficient and the effective carrier mobility alpha(sc)mu(eff) is constant over a wide range of the drain current due to the interplay of the Coulomb scattering coefficient alpha(sc) and the effective carrier mobility mu(eff) variations. In addition, a non-linear increase in the square root of the input gate voltage noise with the gate voltage overdrive was observed explained by the surface roughness scattering. The overall results lead to an analytical expression for the 1/f noise model, enabling to predict the noise level of a transistor with any channel dimensions using its transfer characteristic. This finding makes the noise model suitable for circuit simulation tools. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：54 / 59

页数：6

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